Defects in GaN film grown on Si (100) substrate

Author

Zainal, Norzaini ; Zaini, S.N.W.M. ; Yusof, Mohd Nuru Ehsan ; Alias, Ezzah Azimah ; Radzali, Rosfariza ; Hassan, Zainuriah

Author_Institution

Sch. of Phys., Univ. Sains Malaysia, Minden, Malaysia

fYear

2012

fDate

5-7 Jan. 2012

Firstpage

1

Lastpage

2

Abstract

The authors study the presence defects in a GaN thin film, which was grown on Si (100) substrate using molecular beam epitaxy (MBE). The optical, structural and electrical characteristics of the sample are observed via photoluminescence (PL), X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall-effect measurements. From the measurements, the presence of cubic inclusions and the behavior of the defect in the sample have been identified.

Keywords

Hall effect; III-V semiconductors; X-ray diffraction; gallium compounds; inclusions; molecular beam epitaxial growth; photoluminescence; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaN; Hall-effect; SEM; Si; Si(100) substrate; X-ray diffraction; XRD; cubic inclusions; electrical properties; molecular beam epitaxy; optical properties; photoluminescence; scanning electron microscopy; semiconductor defects; structural properties; thin film; Gallium nitride; Molecular beam epitaxial growth; Nanotechnology; Silicon; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4577-0799-5

Type

conf

DOI

10.1109/ESciNano.2012.6149641

Filename

6149641