Title :
InP/InGaAs heterojunction bipolar transistor circuits for high bit-rate ETDM transmission systems
Author :
André, Ph ; Kauffmann, N. ; Desrousseaux, P. ; Riet, M. ; Konczykowska, A. ; Godin, J.
Author_Institution :
Groupement d´´Interet Econ., OPTO+, Marcoussis, France
Abstract :
Several ICs based on InP/InGaAs DHBT technology and suitable for future 40 Gb/s ETDM optical transmission systems are presented. More than 25 Gb/s operation has been obtained with an MS-DFF circuit, latched and double-latched multiplexer. A 28 GHz static frequency divider and a 46 Gb/s MUX are reported. Finally, a MUX-driver able to supply 2 Vpp at 40 Gb/s is presented. The experimental results obtained, in the state of the art, demonstrate the strong potential of the InP-based HBT technology
Keywords :
III-V semiconductors; bipolar digital integrated circuits; digital communication; driver circuits; emitter-coupled logic; flip-flops; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; multiplexing equipment; optical communication equipment; very high speed integrated circuits; 25 to 46 Gbit/s; 28 GHz; DHBT technology; ECL; InP-InGaAs; InP-based HBT technology; InP/InGaAs HBT circuits; MS-DFF circuit; MUX-driver; VHSIC; double-latched multiplexer; heterojunction bipolar transistor circuits; high bit-rate ETDM transmission systems; latched multiplexer; master-slave D-type flip-flops; optical transmission systems; static frequency divider; Clocks; DH-HEMTs; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Master-slave; Multiplexing; Very high speed integrated circuits;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803553
