Title :
Advanced direct contact via (DCV) process with Ta/TaN/Ta tri-layer barrier for advanced BEOL dual damascene Cu interconnects
Author :
Deng, F.X. ; Zhang, D.H. ; Liao, Haitao ; Hu, H.
Author_Institution :
United Microelectron. Corp. (Singapore Branch), Singapore, Singapore
Abstract :
Three advanced direct contact via processes with Ta/TaN/Ta tri-layer barrier and the electromigration of their structures were comparatively investigated. The process of Ar+ resputtering with median removal of tri-layer barrier shows the lowest defective die percentage. It also shows the highest activation energy and longest downstream electromigration lifetime.
Keywords :
electromigration; interconnections; tantalum; Ta-TaN-Ta; activation energy; advanced BEOL dual damascene interconnects; advanced direct contact via process; back end of line; downstream electromigration lifetime; trilayer barrier; Adhesives; Argon; Cathodes; Contact resistance; Electromigration; Electrons; Life testing; Microelectronics; Performance evaluation; Temperature;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5532243
