Mask design for the reproducible fabrication and reliable pattern transfer for polysilicon Nanowire

In fabrication of Nanowire alignment and exposure are the most critical steps in photolithography process, the resolution requirements and precise alignment are vital, each mask needs to be precisely aligned with original alignment mark. Otherwise, it can´t successfully transfer the original pattern to the wafer surface causing device and circuit failure. Precise transfer of pattern transfer means guarantee in high repeatability and reliability, high throughput and low cost of ownership. By improving this resolution and alignment precision the minimum size can be further reduced to 1nm and beyond. The other important aspect of achieving minimum precised size is, the photo resist must be very sensitive to the exposure light to achieve reasonable throughput. However, if the sensitivity is too high, other photoresist characteristics can be affected, including the resolution. Thus, the paper present a preliminary study on fundamentals of resist exposure and development mechanisms for fabrication of Nanowire, We demonstrated significance of considering process parameters such as quality of resist, soft bake, exposure time and intensity, and development time.