• DocumentCode
    3300240
  • Title

    Fabrication of 20 nm deep silicon dioxide channel using electron beam lithography for manipulation of DNA molecules

  • Author

    Rad, Maryam Alsadat ; Ibrahim, Kamarulazizi

  • Author_Institution
    Nano Optoelectron. Res. & Technol. Lab., Univ. Sains Malaysia, Minden, Malaysia
  • fYear
    2012
  • fDate
    5-7 Jan. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, silicon dioxide (SiO2) nano-channel for DNA molecule manipulation are proposed and fabricated. The fabrication processes of this dielectric SiO2 nano-channel are including the combination of wet anisotropic etching, Electron Beam Lithography (EBL) and plasma etching (RLE).
  • Keywords
    DNA; dielectric materials; electron beam lithography; molecular biophysics; nanobiotechnology; nanofabrication; nanostructured materials; silicon compounds; sputter etching; DNA molecules; SiO2; deep silicon dioxide nanochannel; dielectric nanochannel; electron beam lithography; plasma etching; size 20 nm; wet anisotropic etching; DNA; Fabrication; Lithography; Nanobioscience; Reservoirs; Wet etching; DNA; Etching; Lithography; nano-channel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4577-0799-5
  • Type

    conf

  • DOI
    10.1109/ESciNano.2012.6149651
  • Filename
    6149651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3300240