DocumentCode :
3300240
Title :
Fabrication of 20 nm deep silicon dioxide channel using electron beam lithography for manipulation of DNA molecules
Author :
Rad, Maryam Alsadat ; Ibrahim, Kamarulazizi
Author_Institution :
Nano Optoelectron. Res. & Technol. Lab., Univ. Sains Malaysia, Minden, Malaysia
fYear :
2012
fDate :
5-7 Jan. 2012
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, silicon dioxide (SiO2) nano-channel for DNA molecule manipulation are proposed and fabricated. The fabrication processes of this dielectric SiO2 nano-channel are including the combination of wet anisotropic etching, Electron Beam Lithography (EBL) and plasma etching (RLE).
Keywords :
DNA; dielectric materials; electron beam lithography; molecular biophysics; nanobiotechnology; nanofabrication; nanostructured materials; silicon compounds; sputter etching; DNA molecules; SiO2; deep silicon dioxide nanochannel; dielectric nanochannel; electron beam lithography; plasma etching; size 20 nm; wet anisotropic etching; DNA; Fabrication; Lithography; Nanobioscience; Reservoirs; Wet etching; DNA; Etching; Lithography; nano-channel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4577-0799-5
Type :
conf
DOI :
10.1109/ESciNano.2012.6149651
Filename :
6149651
Link To Document :
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