Title :
A class-AB 1.65GHz-2GHz broadband CMOS medium power amplifier
Author :
Aniktar, H. ; Sjöland, H. ; Mikkelsen, J.H. ; Larsen, T.
Author_Institution :
RISC Div., Aalborg Univ., Aalborg East, Denmark
Abstract :
In this paper a single stage broadband CMOS RF power amplifier is presented. The power amplifier is fabricated in a 0.25μm CMOS process. Measurements with a 2.5 V supply voltage show an output power of 18.5 dBm with an associated PAE of 16% at the 1-dB compression point. The measured gain is 5.1 ± 0.5 dB from 1.65 to 2 GHz. Simulated and measured results agree reasonably well.
Keywords :
CMOS integrated circuits; UHF power amplifiers; wideband amplifiers; 0.25 micron; 1.65 to 2 GHz; 2.5 V; CMOS RF power amplifier; broadband power amplifier; Bonding; Broadband amplifiers; Capacitance; Frequency; Inductance; Integrated circuit interconnections; Power amplifiers; Power generation; Radiofrequency amplifiers; Voltage;
Conference_Titel :
NORCHIP Conference, 2005. 23rd
Print_ISBN :
1-4244-0064-3
DOI :
10.1109/NORCHP.2005.1597041
