Title :
Fabrication of p-ZnO/n-GaN diodes using a simple thermal evaporation technique
Author :
Saron, Kamaleldin Mohamed Abdalla ; Hashim, Md Roslan
Author_Institution :
Nano-Optoelectron. Res. & Technol. Lab., Univ. Sains Malaysia (USM), Minden, Malaysia
Abstract :
This paper reports on the fabriaction of p-ZnO/n-GaN heterojunction diodes on n-Si (111) substrates. The p-ZnO/n-GaN heterolayers are annealed in (N2/O2) atmosphere at different temperatures (600 and 700°C).
Keywords :
II-VI semiconductors; III-V semiconductors; annealing; evaporation; gallium compounds; p-i-n diodes; p-n heterojunctions; wide band gap semiconductors; zinc compounds; Si; ZnO-GaN; annealing; heterolayers; n-Si (111) substrates; p-n heterojunction diodes; simple thermal evaporation; temperature 600 degC; temperature 700 degC; Gallium nitride; Heterojunctions; Light emitting diodes; Nanowires; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4577-0799-5
DOI :
10.1109/ESciNano.2012.6149661
