DocumentCode
3300493
Title
Optimization of SOI wire waveguide geometry for maximum continuous wave Raman gain
Author
Wang, S.H.
Author_Institution
Dept. of Microelectron., Fuzhou Univ., Fuzhou, China
fYear
2013
fDate
26-28 July 2013
Firstpage
1
Lastpage
3
Abstract
We numerically investigated the relationship between the transverse waveguide geometry and the continuous-wave Raman gain in silicon-on-insulator wire waveguide Raman amplifiers. A Raman gain enhancement can be achieved in waveguides with small effective mode area.
Keywords
optical fibre amplifiers; optical waveguides; optimisation; silicon-on-insulator; Raman amplifiers; Raman gain enhancement; SOI wire waveguide geometry; Si; continuous wave Raman gain; optimization; silicon-on-insulator; transverse waveguide geometry; Charge carrier lifetime; Gain; Geometry; Optical waveguides; Silicon; Stimulated emission; Wires; Raman Amplification; Silicon photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communications and Networks (ICOCN), 2013 12th International Conference on
Conference_Location
Chengdu
Type
conf
DOI
10.1109/ICOCN.2013.6617248
Filename
6617248
Link To Document