Title :
Optimization of SOI wire waveguide geometry for maximum continuous wave Raman gain
Author_Institution :
Dept. of Microelectron., Fuzhou Univ., Fuzhou, China
Abstract :
We numerically investigated the relationship between the transverse waveguide geometry and the continuous-wave Raman gain in silicon-on-insulator wire waveguide Raman amplifiers. A Raman gain enhancement can be achieved in waveguides with small effective mode area.
Keywords :
optical fibre amplifiers; optical waveguides; optimisation; silicon-on-insulator; Raman amplifiers; Raman gain enhancement; SOI wire waveguide geometry; Si; continuous wave Raman gain; optimization; silicon-on-insulator; transverse waveguide geometry; Charge carrier lifetime; Gain; Geometry; Optical waveguides; Silicon; Stimulated emission; Wires; Raman Amplification; Silicon photonics;
Conference_Titel :
Optical Communications and Networks (ICOCN), 2013 12th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICOCN.2013.6617248
