DocumentCode :
3300500
Title :
The advanced 7th generation IGBT module for high power density technology
Author :
Kawabata, J. ; Kusunoki, Y. ; Onozawa, Y. ; Nishimura, Y. ; Kobayashi, Y. ; Ikawa, O.
Author_Institution :
Fuji Electr. Co., Ltd., Fuji, Japan
fYear :
2015
fDate :
1-5 June 2015
Firstpage :
554
Lastpage :
559
Abstract :
Recently the main requirements found in the market are further downsizing and higher efficiency of power conversion systems. Enhanced power density of the power modules will be the key to succeed. The increasing package reliability in higher junction temperature operation will be the major challenge. By further improvement of the chip characteristics and the development of new high reliability package materials and technologies, the performance of the modules were significantly improved. Additionally, the maximum operating temperature was even increased to up to 175°C. The new 7th generation IGBT module realized further downsizing and higher efficiency of power conversion systems.
Keywords :
insulated gate bipolar transistors; power conversion; semiconductor device packaging; advanced 7th generation IGBT module; chip characteristics; high power density technology; junction temperature operation; package reliability; power conversion systems; power modules; Aluminum nitride; III-V semiconductor materials; Insulated gate bipolar transistors; Reliability; Resistance; Substrates; Switches; High efficiency; High power density; High reliability; Power modules;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
Conference_Location :
Seoul
Type :
conf
DOI :
10.1109/ICPE.2015.7167838
Filename :
7167838
Link To Document :
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