• DocumentCode
    3300500
  • Title

    The advanced 7th generation IGBT module for high power density technology

  • Author

    Kawabata, J. ; Kusunoki, Y. ; Onozawa, Y. ; Nishimura, Y. ; Kobayashi, Y. ; Ikawa, O.

  • Author_Institution
    Fuji Electr. Co., Ltd., Fuji, Japan
  • fYear
    2015
  • fDate
    1-5 June 2015
  • Firstpage
    554
  • Lastpage
    559
  • Abstract
    Recently the main requirements found in the market are further downsizing and higher efficiency of power conversion systems. Enhanced power density of the power modules will be the key to succeed. The increasing package reliability in higher junction temperature operation will be the major challenge. By further improvement of the chip characteristics and the development of new high reliability package materials and technologies, the performance of the modules were significantly improved. Additionally, the maximum operating temperature was even increased to up to 175°C. The new 7th generation IGBT module realized further downsizing and higher efficiency of power conversion systems.
  • Keywords
    insulated gate bipolar transistors; power conversion; semiconductor device packaging; advanced 7th generation IGBT module; chip characteristics; high power density technology; junction temperature operation; package reliability; power conversion systems; power modules; Aluminum nitride; III-V semiconductor materials; Insulated gate bipolar transistors; Reliability; Resistance; Substrates; Switches; High efficiency; High power density; High reliability; Power modules;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
  • Conference_Location
    Seoul
  • Type

    conf

  • DOI
    10.1109/ICPE.2015.7167838
  • Filename
    7167838
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3300500