DocumentCode :
3300555
Title :
Analysis of GaN HEMT switching behavior
Author :
Lautner, Jennifer ; Piepenbreier, Bernhard
Author_Institution :
Electr. Drives & Machines, Univ. of Erlangen-Nuremberg, Erlangen, Germany
fYear :
2015
fDate :
1-5 June 2015
Firstpage :
567
Lastpage :
574
Abstract :
This paper presents a comprehensive study of the GaN HEMT switching performance in a phase-leg configuration with special focus on the impact of different parasitic effects. Therefore, a simulation model of a double pulse test circuit with GaN devices and including parasitic elements is proposed. The causes of parasitic inductances and capacitances are discussed and their effects are analyzed. Furthermore, the influence of the gate resistance value and dead time is investigated. A double pulse tester was designed to experimentally verify the simulation results. This paper shows the switching transients of both devices in a phase-leg configuration for varying parameters graphically and offers a better insight into the switching behavior of GaN transistors. The understanding of the parasitic effects and varying parameter enables improved design and performance of fast switching power converters.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power convertors; semiconductor device models; switching transients; wide band gap semiconductors; GaN; GaN HEMT switching behavior; double pulse test circuit; parasitic capacitance; parasitic elements; parasitic inductance; phase-leg configuration; power converters; switching transients; Gallium nitride; Inductance; Integrated circuit modeling; Logic gates; Switches; Switching circuits; Transient analysis; GaN HEMT; dead time; parasitics; phase-leg; switching performance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
Conference_Location :
Seoul
Type :
conf
DOI :
10.1109/ICPE.2015.7167840
Filename :
7167840
Link To Document :
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