Title :
Study of the CO response of SiC based field effect gas sensors
Author :
Andersson, M. ; Wingbrant, H. ; Spetz, A. Lloyd
Author_Institution :
Dept. of Phys., Chem., & Biol., Linkoping Univ.
fDate :
Oct. 30 2005-Nov. 3 2005
Abstract :
The response characteristics of SiC based field effect gas sensors towards varying CO and O2 concentrations over a wide temperature range and at atmospheric pressure has been studied in detail. Both thin, discontinuous as well as dense, homogeneous Pt films as the catalytic gate material in field effect transistor devices have been investigated and the results compared to CO oxidation characteristics over Pt/SiO2 catalysts as reported in literature. Based on the results a hypothesis regarding the mechanism behind CO sensitivity of field effect devices is put forward, also emphasizing the importance of increased sensitivity to background hydrogen
Keywords :
field effect devices; gas sensors; sensitivity; silicon compounds; wide band gap semiconductors; CO; O2; Pt-SiO; SiC; catalytic gate material; field effect transistor devices; gas sensors; homogeneous films; oxidation; sensitivity; Automotive materials; FETs; Gas detectors; Hydrogen; Metal-insulator structures; Oxidation; Physics; Semiconductor materials; Silicon carbide; Temperature sensors;
Conference_Titel :
Sensors, 2005 IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-9056-3
DOI :
10.1109/ICSENS.2005.1597647
