Fabrication of p-ZnO/n-GaN diodes using a simple thermal evaporation technique

The fabrication and characteristics of grown ZnO nanowire/n-GaN heterojunction are reported. The ZnO nanowires were grown using a tube furnace on a prepared n-GaN patterned Si (111) substrate. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of p-ZnO nanowire/n-GaN.