DocumentCode
3301049
Title
Fabrication of p-ZnO/n-GaN diodes using a simple thermal evaporation technique
Author
Saron, Kamaleldin Mohamed Abdalla ; Hashim, Md Roslan
Author_Institution
Nano-Optoelectron. Res. & Technol. Lab. Sch. of Phys., Univ. Sains Malaysia (USM), Minden, Malaysia
fYear
2012
fDate
5-7 Jan. 2012
Firstpage
1
Lastpage
2
Abstract
The fabrication and characteristics of grown ZnO nanowire/n-GaN heterojunction are reported. The ZnO nanowires were grown using a tube furnace on a prepared n-GaN patterned Si (111) substrate. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of p-ZnO nanowire/n-GaN.
Keywords
II-VI semiconductors; III-V semiconductors; evaporation; gallium compounds; nanofabrication; nanowires; p-n heterojunctions; semiconductor diodes; semiconductor growth; wide band gap semiconductors; zinc compounds; Si; Si (111) substrate; ZnO-GaN; nanowire heterojunction growth; p-n junction; rectifying current-voltage characteristics; simple thermal evaporation technique; tube furnace; Annealing; Gallium nitride; Heterojunctions; Light emitting diodes; Scanning electron microscopy; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on
Conference_Location
Johor Bahru
Print_ISBN
978-1-4577-0799-5
Type
conf
DOI
10.1109/ESciNano.2012.6149688
Filename
6149688
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