Title :
AlGaN/GaN microwave power HEMT´s
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
High average microwave power output density has been observed with AlGaN/GaN HEMT´s grown on sapphire substrates, reaching 4.0 W/mm with 49% power-added efficiency for single gates, and 1.8 W/mm with 78% power-added efficiency for multiple gates. Using SiC substrates, an order of magnitude more heat can be removed. The breakdown electric field in the GaN channel is /spl sim/3 MV/cm, 7.5 times that of GaAs. The average transit velocity is 1-1.2/spl times/10/sup 7/ cm/s, allowing an intrinsic f/sub t/ as high as 94 GHz for 0.15 /spl mu/m gate length.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device breakdown; wide band gap semiconductors; 0.15 micron; 49 to 78 percent; 94 GHz; Al/sub 2/O/sub 3/; AlGaN-GaN; GaN channel; SiC; SiC substrates; breakdown electric field; microwave power HEMT; microwave power output density; sapphire substrates; Aluminum gallium nitride; Electric breakdown; Electromagnetic heating; Electrons; Gallium arsenide; Gallium nitride; HEMTs; Microwave devices; Silicon carbide; Temperature;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803718
