Title :
Status and roadmap of GaAs technology in Georgia, former Soviet Union
Author :
Khuchua, N.P. ; Gerasimov, A.B. ; Chikovani, R.I. ; Chakhnakia, Z.D. ; Khvedelidze, L.V. ; Melkadze, R.G. ; Bibilashvili, A.P. ; Mkheidze, T.D. ; Goderdzishvili, G.I.
Author_Institution :
RCP, Tbilisi State Univ., Georgia
Abstract :
This paper presents highlights and major achievements in research and development of GaAs technology in Georgia in three main directions: MESFETs, HEMTs and digital ICs; low-temperature stimulated processes; monolithic LED arrays for OEICs. The potential roadmaps of these technologies are also discussed.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; gallium arsenide; high electron mobility transistors; integrated circuit technology; integrated optoelectronics; light emitting diodes; monolithic integrated circuits; GaAs; GaAs technology; Georgia; HEMTs; MESFETs; OEIC; digital IC; former Soviet republic; low-temperature stimulated processes; monolithic LED arrays; Digital integrated circuits; Electrons; Frequency conversion; Gallium arsenide; Insulation; MESFETs; Microelectronics; Optical device fabrication; Paper technology; Production;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803721
