DocumentCode
3301142
Title
Ramp-up of first SiGe circuits for mobile communications: positioning of SiGe vs. GaAs and silicon
Author
Klepser, B.-U. ; Klein, W.
Author_Institution
Infineon Technol., Munich, Germany
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
37
Lastpage
40
Abstract
This paper reviews the current competition and potential of GaAs, SiGe and Si components in DECT, GSM, CDMA and PDC wireless communication systems. Results of the first products designed in a SiGe bipolar technology, e.g. dual band low noise amplifiers and PLL prescalers, are presented.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; bipolar integrated circuits; code division multiple access; cordless telephone systems; mobile communication; phase locked loops; prescalers; semiconductor materials; CDMA communication systems; DECT; GSM; PDC wireless communication systems; PLL prescalers; SiGe; SiGe bipolar technology; SiGe circuits; dual band LNA; low noise amplifiers; mobile communications; Circuits; Dual band; GSM; Gallium arsenide; Germanium silicon alloys; Mobile communication; Multiaccess communication; Product design; Silicon germanium; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803722
Filename
803722
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