Title :
Low temperature (LT) grown GaAs buffer layers for III-V semiconductor processes
Author :
Weatherford, T.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Naval Postgraduate Sch., Monterey, CA, USA
Abstract :
Low Temperature Grown (LTG) GaAs buffers have been shown to eliminate backgating, reduce subthreshold leakage, provide ultrashort carrier lifetimes and radiation hardness. However, undoped LTG buffers have shown poor reliability, poor RF performance and inconsistent lot-to-lot properties. Recent p-doped LT GaAs buffers promise thermally stable material to withstand changes during annealing steps, plus improved performance over undoped LT GaAs buffers.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; leakage currents; low-temperature techniques; molecular beam epitaxial growth; radiation hardening (electronics); semiconductor epitaxial layers; semiconductor growth; GaAs; III-V semiconductor processes; RF performance; annealing steps; backgating; lot-to-lot properties; low temperature grown GaAs buffer layers; radiation hardness; reliability; subthreshold leakage; thermally stable material; ultrashort carrier lifetimes; Annealing; Buffer layers; Conductivity; Crystalline materials; Electron traps; FETs; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Temperature;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803724
