Title :
A CMOS time-of-flight range image sensor with gates on field oxide structure
Author :
Izhal, A.H. ; Ushinaga, T. ; Sawada, T. ; Homma, M. ; Maeda, Y. ; Kawahito, S.
Author_Institution :
Graduate Sch. of Electron. Sci. & Technol., Shizuoka Univ., Hamamatsu
fDate :
Oct. 30 2005-Nov. 3 2005
Abstract :
This paper presents a new type of CMOS time-of-flight (TOF) range image sensor using single layer gates on field oxide structure for photo conversion and charge transfer. An additional process step to create an n-type buried layer is used. This simple structure allows the realization of a high resolution array with 15 times 15 mum2 pixels in standard CMOS process. To minimize the influence of background light, the proposed pixel structure has charge draining gates. A small duty cycle optical pulse is also used for this purpose. The TOF sensor chip was successfully implemented and tested
Keywords :
CMOS image sensors; CMOS time-of-flight range image sensor; buried layer; charge draining gates; charge transfer; field oxide structure; photo conversion; pixel structure; CMOS image sensors; CMOS technology; Costs; Electrons; Image sensors; Light sources; Lighting; Optical imaging; Pulse modulation; Sensor arrays;
Conference_Titel :
Sensors, 2005 IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-9056-3
DOI :
10.1109/ICSENS.2005.1597656
