DocumentCode :
33012
Title :
Silicon Nanowire Field-Effect Transistors—A Versatile Class of Potentiometric Nanobiosensors
Author :
Luye Mu ; Ye Chang ; Sawtelle, Sonya D. ; Wipf, Mathias ; Xuexin Duan ; Reed, Mark A.
Author_Institution :
State Key Lab. of Precision Meas. Technol. & Instrum., Tianjin Univ., Tianjin, China
Volume :
3
fYear :
2015
fDate :
2015
Firstpage :
287
Lastpage :
302
Abstract :
Silicon nanowire field-effect transistors (Si-NW FETs) have been demonstrated as a versatile class of potentiometric nanobiosensors for real time, label-free, and highly sensitive detection of a wide range of biomolecules. In this review, we summarize the principles of such devices and recent developments in device fabrication, fluid integration, surface functionalization, and biosensing applications. The main focus of this review is on CMOS compatible Si-NW FET nanobiosensors.
Keywords :
CMOS integrated circuits; biochemistry; biological techniques; electrochemical sensors; field effect transistors; materials preparation; molecular biophysics; nanobiotechnology; nanofabrication; nanosensors; nanowires; potentiometers; real-time systems; reviews; silicon; surface treatment; CMOS compatible Si-NW FET nanobiosensor; Si; biosensing application; device fabrication development; fluid integration development; highly sensitive biomolecule detection; label-free biomolecule detection; real-time biomolecule detection; review; silicon nanowire field effect transistor; surface functionalization development; versatile potentiometric nanobiosensor class; Biosensors; Field effect transistors; Nanobioscience; Nanoscale devices; Semiconductor device measurement; Silicon; Transistors; Biosensors; Field effect transistors; Nanobiosensors; Nanowires; Semiconductor nanostructures; field effect transistors; nanobiosensors; nanowires; semiconductor nanostructures;
fLanguage :
English
Journal_Title :
Access, IEEE
Publisher :
ieee
ISSN :
2169-3536
Type :
jour
DOI :
10.1109/ACCESS.2015.2422842
Filename :
7089167
Link To Document :
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