Silicon Nanowire Field-Effect Transistors—A Versatile Class of Potentiometric Nanobiosensors

Author

Luye Mu ; Ye Chang ; Sawtelle, Sonya D. ; Wipf, Mathias ; Xuexin Duan ; Reed, Mark A.

Author_Institution

State Key Lab. of Precision Meas. Technol. & Instrum., Tianjin Univ., Tianjin, China

Volume

3

fYear

2015

fDate

2015

Firstpage

287

Lastpage

302

Abstract

Silicon nanowire field-effect transistors (Si-NW FETs) have been demonstrated as a versatile class of potentiometric nanobiosensors for real time, label-free, and highly sensitive detection of a wide range of biomolecules. In this review, we summarize the principles of such devices and recent developments in device fabrication, fluid integration, surface functionalization, and biosensing applications. The main focus of this review is on CMOS compatible Si-NW FET nanobiosensors.

Keywords

CMOS integrated circuits; biochemistry; biological techniques; electrochemical sensors; field effect transistors; materials preparation; molecular biophysics; nanobiotechnology; nanofabrication; nanosensors; nanowires; potentiometers; real-time systems; reviews; silicon; surface treatment; CMOS compatible Si-NW FET nanobiosensor; Si; biosensing application; device fabrication development; fluid integration development; highly sensitive biomolecule detection; label-free biomolecule detection; real-time biomolecule detection; review; silicon nanowire field effect transistor; surface functionalization development; versatile potentiometric nanobiosensor class; Biosensors; Field effect transistors; Nanobioscience; Nanoscale devices; Semiconductor device measurement; Silicon; Transistors; Biosensors; Field effect transistors; Nanobiosensors; Nanowires; Semiconductor nanostructures; field effect transistors; nanobiosensors; nanowires; semiconductor nanostructures;

fLanguage

English

Journal_Title

Access, IEEE

Publisher

ieee

ISSN

2169-3536

Type

jour

DOI

10.1109/ACCESS.2015.2422842

Filename

7089167