Title :
InP/GaAsSb/InP DHBTs with high f/sub T/ and f/sub MAX/ for wireless communication applications
Author :
Bolognesi, C.R. ; Matine, N. ; Dvorak, M.W. ; Xu, X.G. ; Watkins, S.P.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
We study the DC and microwave performance of MOCVD-grown carbon-doped InP/GaAsSb/InP double heterojunction transistors (DHBTs) with high cut-off frequencies. A maximum cutoff frequency of 106 GHz is obtained while maintaining a relatively high breakdown voltage (BV/sub CEO/=8 V) in devices with a 2000 /spl Aring/ InP collector. In these devices, the maximum frequency of oscillation is limited by the GaAsSb base sheet resistance (which is high in comparison to GaAs or GaInAs conventional bases), and high f/sub MAX/ values can only be achieved by scaling the devices to simultaneously reduce the total base resistance R/sub B/ and the base-collector capacitance C/sub BC/. A new self-aligned process was developed which results in f/sub T/=80 GHz and C/sub BC/=90 GHz for devices with a 3000 /spl Aring/ collector and a 1 /spl mu/m emitter stripe fabricated by contact lithography and all-wet etching.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device breakdown; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 106 GHz; 2000 angstrom; 3000 angstrom; 8 V; 80 GHz; 90 GHz; DHBTs; InP-GaAsSb-InP; MOCVD; all-wet etching; base sheet resistance; base-collector capacitance; breakdown voltage; contact lithography; cut-off frequencies; emitter stripe; maximum frequency of oscillation; microwave performance; self-aligned process; total base resistance; wireless communication applications; Cutoff frequency; Double heterojunction bipolar transistors; Electron emission; Gallium arsenide; Indium phosphide; Microwave devices; Microwave transistors; Thermal conductivity; Thermal resistance; Wireless communication;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803728
