Title :
High linearity K-band InP HBT power amplifier MMIC with 62.8% PAE at 21 GHz
Author :
Yang, L.W. ; Kobayashi, K.W. ; Steit, D.C. ; Oki, A.K. ; Yen, H.C. ; Grossman, P.C. ; Block, T.R. ; Tran, L.T. ; Gutierrez-Aitken, A. ; Callejo, L.G. ; Macek, J. ; Maas, S.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
We report the first InP HBT MMIC power amplifier chip results at K-band. A 21 GHz fully monolithic 2 mil InP HBT power MMIC which achieves 62.8% PAE with 10 dB gain and 20 dBm output power. A higher power MMIC at 18.5 GHz achieved 25 dBm output power with 40% PAE at 1 dB compression under class AB operation with no noticeable gain expansion. The MMIC has low distortion with 3/sup rd/ order IM suppression C/I of -30.2 dBc and 5th order suppression C/I of -50.8 dBc at a combined output power of 19.3 dBm. Both amplifiers were operated under low DC power with a conservative peak current densities of <35 kA/cm/sup 2/ and a Vce of <3.3 V; showing a potential reliable application in communications.
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; indium compounds; integrated circuit design; power integrated circuits; 10 dB; 18.5 to 21 GHz; 3.3 V; 40 to 62.8 percent; InP; InP HBT power amplifier MMIC; K-band power amplifier; class AB operation; high linearity power amplifier; low distortion; power MMIC; Current density; Gain; Heterojunction bipolar transistors; High power amplifiers; Indium phosphide; K-band; Linearity; MMICs; Power amplifiers; Power generation;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803730
