Title :
FIB sample preparation for TEM failure analysis of advanced devices
Author :
Zhu, J. ; Wang, Q.X. ; Chen, C.Q. ; Neo, S.P. ; Du, A.Y. ; Hua, Y.N.
Author_Institution :
Dept. of QRA, Global Foundries Singapore, Singapore, Singapore
Abstract :
With continuous scaling in transistor size, there is demand to develop advanced FIB techniques for TEM failure analysis. Two techniques are reported here: 1) consecutive planar-cross section sample preparation for dual-direction TEM analysis and, 2) enhanced coating method for photo resists profile evaluation. Both the techniques have been successfully applied on deep sub-micron device issues which are difficult for the conventional FIB methods.
Keywords :
coatings; failure analysis; focused ion beam technology; photoresists; transistors; transmission electron microscopy; FIB sample preparation; TEM failure analysis; coating method; dual-direction TEM analysis; focused ion beam; photoresists; planar-cross section; transistor size; Coatings; Electronics industry; Failure analysis; Foundries; Ion beams; Lithography; Resists; Semiconductor materials; Transistors; Wood industry;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5532303
