3.3 V MSM-TIA for Gigabit Ethernet

Author

Jayakumar, A. ; Bustos, M. ; Cheskis, D. ; Pietrucha, S. ; Bonelli, M. ; Al-Kuran, S.

Author_Institution

ANADIGICS, Warren, NJ, USA

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

91

Lastpage

94

Abstract

The paper describes a 3.3 V, monolithically integrated metal-semiconductor-metal photodetector (MSM-PD) and transimpedance amplifier (TIA) chip that is fully compliant with the Gigabit Ethernet receiver specification for the short reach application (IEEE 802.3z 1000BASE-SX). Key typical performance specifications are: -22 dBm sensitivity; 1200 MHz 3dB bandwidth; 1300 V/W differential responsivity and 120 mW power dissipation at 3.3 V. The chip is fabricated in a production 0.5 /spl mu/m gate length GaAs MESFET technology and is packaged in a TO-46 header with a flat window and a ball-lens cap option.

Keywords

III-V semiconductors; MESFET integrated circuits; gallium arsenide; local area networks; metal-semiconductor-metal structures; optical fibre networks; optical receivers; photodetectors; preamplifiers; 0.5 micron; 1000BASE-SX; 120 mW; 1200 MHz; 3.3 V; GaAs; Gigabit Ethernet; IEEE 802.3z; MESFET technology; TO-46 header; ball-lens cap option; differential responsivity; gate length; metal-semiconductor-metal photodetector; power dissipation; short reach application; transimpedance amplifier; Bandwidth; Detectors; Electrodes; Ethernet networks; Gallium arsenide; MESFETs; Optical receivers; Optical transmitters; Photodetectors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803734

Filename

803734