Title :
Study of turn-on characteristics of SCRs for ESD protection with TDR-O and TDR-S TLPs
Author :
Huo, Ming-xu ; Han, Yan ; Li, You ; Song, Bo ; Liou, Juin-jie ; Dong, Shu-rong ; Ding, Kou-bao ; Guo, Wei ; Huang, Dahai ; Li, Mingliang ; Ma, Fei ; Miao, Meng
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
There are few good evaluation methods to evaluate CDM ESD protection performance such as device turn-on speed, etc. A new current-waveform-based method to evaluate the turn-on speed of an ESD protection device is proposed. The method uses two Transmission-Line Pulse (TLP) Tester to investigate the turn-on characteristics of SCR and related devices. Both intrinsic and normalized turn-on conditions are defined for protection devices to study the different factors that affect the turn-on characteristic under various conditions. The turn-on of both forwardly and reversely working of devices is measured for the CDM model including positive and negative currents. From the experimental results, it is concluded that NMLSCR´s performance is superior to PMLSCR in turn-on speed; MLSCR requires higher It1 to be turned on; and the turn-on speed of a PMLSCR decreases significantly with small increases in pulse amplitude under intrinsic working condition while NMLSCR and LSCR do not exhibit such property.
Keywords :
electrostatic discharge; thyristors; CDM ESD protection performance; N-type modified-lateral SCR; NMLSCR performance; P-type modified-lateral SCR; PMLSCR; TDR-O TLP; TDR-S TLP; charged device model; current-waveform-based method; electrostatic discharge; silicon controlled rectifier; transmission-line pulse tester; turn-on characteristics; Analytical models; Current measurement; Electrostatic discharge; Power system transients; Protection; Pulse measurements; Testing; Thyristors; Transient analysis; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5532309