A single supply device technology for wireless applications

Author

Glass, E. ; Huang, J. ; Martinez, M. ; Hartin, O. ; Valentine, W. ; LaBelle, M. ; Lan, E.

Author_Institution

Semicond. Product Sector, Motorola Inc., Tempe, AZ, USA

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

123

Lastpage

126

Abstract

Single supply power amplifiers have become the new paradigm in portable phone handsets due to the recent availability of HBT and pseudo enhancement mode PHEMT technology. We have developed a true enhancement mode heterostructure insulated-gate FET device (HIGFET) which is suitable for use in both digital and analog power amplifiers and in addition to this, shows promise for use in small signal receiver applications.

Keywords

UHF field effect transistors; UHF power amplifiers; cellular radio; insulated gate field effect transistors; power field effect transistors; radio receivers; semiconductor device reliability; telephone sets; transceivers; 1900 MHz; 900 MHz; HIGFET; analog power amplifiers; digital modulated power amplifiers; enhancement mode; heterostructure IGFET; heterostructure insulated-gate FET; portable phone handsets; single supply device technology; single supply power amplifiers; small signal receiver applications; wireless applications; FETs; Heterojunction bipolar transistors; High power amplifiers; Leakage current; PHEMTs; Power amplifiers; Power generation; Switches; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803741

Filename

803741