Title :
Analysis of PAE 50% highly linear characteristics of new structure transistor "self-aligned gate PHEMT" for W-CDMA application
Author :
Sasaki, T. ; Takada, Y. ; Tanabe, Y. ; Nitta, T. ; Kakiuchi, Y. ; Yoshimura, M. ; Fujieda, R. ; Suzuki, T. ; Kayano, H. ; Hirose, M. ; Kitaura, Y.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
This paper describes the analysis of linear performance of PAE 50% for wide band CDMA (W-CDMA) with a new structure FET "Self aligned gate PHEMT (Saga-PHEMT)" which was fabricated in 0.8 /spl mu/m WNx-gate self aligned structure on epitaxial layers. We obtained relations between ACPR and AM-AM/AM-PM conversions as follows; the ACPR is mainly controlled with the AM-AM conversion, and the phase-delay of the AM-PM conversion functions effectively as prevention of ACPR deteriorations which are caused by nonlinear AM-AM conversion.
Keywords :
UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; code division multiple access; mobile radio; power HEMT; 0.8 micron; 50 percent; ACPR; AM-AM conversion; AM-PM conversion; Saga-PHEMT; W-CDMA application; WN; WNx-gate self aligned structure; epitaxial layers; highly linear characteristics; linear performance analysis; phase-delay; self-aligned gate PHEMT; wide band CDMA; Capacitance; Epitaxial layers; High power amplifiers; Linearity; Mobile communication; Multiaccess communication; Performance analysis; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803743
