Title :
A fast, scaleable FET model that accounts for propagation effects
Author :
Lardizabal, S.M. ; Leoni, R.E., III ; Mallavarpu, R. ; Teeter, D. ; Snow, M.
Author_Institution :
Adv. Device Center, Raytheon RF Components, Andover, MA, USA
Abstract :
This work developed a distributed PHEMT model for small signal S-parameter simulation. Distributed effects due to feed metalization were compared for a wide range of measured PHEMT geometries. Agreement between measured and modeled results was achieved for a large 40 x 60 /spl mu/m PHEMT, which makes the model attractive for large-signal model development.
Keywords :
S-parameters; high electron mobility transistors; microwave field effect transistors; semiconductor device models; PHEMT geometries; distributed PHEMT model; distributed effects; fast scaleable FET model; feed metalization; large-signal model development; linear FET model; propagation effects; pseudomorphic HEMT; small-signal S-parameter simulation; Computational modeling; Displays; FETs; Feeds; Fingers; Geometry; Inductance; Radio frequency; Snow; Solid modeling;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803744
