DocumentCode
3301543
Title
High efficiency monolithic InP HEMT V-band power amplifier
Author
Liu, S.M.J. ; Tang, O.S.A. ; Kong, W. ; Nichols, K. ; Heaton, J. ; Chao, P.C.
Author_Institution
Lockheed Martin Co., Nashua, NH, USA
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
145
Lastpage
147
Abstract
This paper reports our development of a monolithic InP HEMT based power amplifier showing state-of-the-art V-band performance. A single-stage amplifier with a 600 um cell periphery demonstrated 224 mW of output power at the peak power-added efficiency of 43% with 7.5 dB power gain at 60 GHz. To the best of our knowledge, this is the best combination of output power and efficiency reported to date at this frequency for a solid state amplifier.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; indium compounds; integrated circuit design; millimetre wave power amplifiers; 224 mW; 43 percent; 60 GHz; 7.5 dB; EHF; InP; InP HEMT power amplifier; MM-wave power amplifier; V-band power amplifier; high efficiency monolithic amplifier; single-stage amplifier; solid state amplifier; Broadband amplifiers; Gain; Gallium arsenide; HEMTs; High power amplifiers; Indium phosphide; MMICs; Power amplifiers; Power generation; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803746
Filename
803746
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