A single chip 1-W InP HEMT V-band module

Author

Chen, Y.C. ; Ingram, D.L. ; Yamauchi, D. ; Brunner, B. ; Kraus, J. ; Barsky, M. ; Grundbacher, R. ; Cha, S.K. ; Lai, R. ; Block, T. ; Wojtowicz, M. ; Chin, T.P. ; Allen, B. ; Yen, H.C. ; Streit, D.C.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

149

Lastpage

152

Abstract

We present a world-record V-band single-chip InP HEMT power amplifier module. The two-stage amplifier consists of two channels with 4.48 mm total output periphery. It was fabricated using TRW´s 0.5 /spl mu/m InP HEMT MMIC production process. The two channels were combined by off-chip Wilkinson combiners. Under CW test condition, the amplifier delivered 1 W of output power with 21% power added efficiency and 15 dB associated gain at 62 GHz. The linear gain was 20 dB. We have also characterized a single channel MMIC power amplifier which delivered 515 mW output power with 25% power added efficiency at 62 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; indium compounds; millimetre wave power amplifiers; modules; power integrated circuits; 0.15 micron; 1 W; 15 dB; 20 dB; 21 percent; 25 percent; 515 mW; 62 GHz; HEMT power amplifier module; InP; TRW HEMT MMIC production process; V-band module; amplifier performance; fabrication; linear gain; offchip Wilkinson combiners; single chip InP HEMT module; single-channel configuration; two-channel configuration; two-stage amplifier; Frequency; Gain; HEMTs; Indium phosphide; MMICs; Millimeter wave technology; Power amplifiers; Power generation; Production; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803747

Filename

803747