Novel low-cost process for 0.1-/spl mu/m T-shaped gate of InGaP/InGaAs pseudomorphic HEMT

T-gate HEMTs with deep submicron gate length are indispensable for realizing microwave and millimeter wave systems because of their superior performance in high-frequency operation and low noise characteristics [l]. In addition to high performance, recent growth in wireless applications such as broadband wireless communications and automotive radar systems have imposed strong cost reduction measures on these devices.