Title :
Analysis of surface iterated kink phenomena of GaAs MESFETs
Author :
Horio, K. ; Wakabayashi, A.
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan
Abstract :
Surface-state effects on kink or sub-breakdown phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to space-charge effects originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap related kink phenomenon is a rather slow process. Substrate-related dynamic behavior including kink region is also analyzed.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; impact ionisation; semiconductor device breakdown; semiconductor device models; space-charge-limited conduction; surface states; GaAs; MESFETs; dynamic simulation; hole trapping; impact ionization; potential profiles; space-charge effects; sub-breakdown phenomena; substrate-related dynamic behavior; surface iterated kink phenomena; surface states; transient simulation; trap related kink phenomenon; two-dimensional simulation; Electric breakdown; Electrostatic discharge; Energy states; Gallium arsenide; Impact ionization; MESFETs; Modeling; Poisson equations; Surface treatment; Transient analysis;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803751
