Title :
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs
Author :
Menozzi, R. ; Dieci, D. ; Messori, M. ; Sozzi, G. ; Lanzieri, C. ; Canali, C.
Author_Institution :
Dipt. di Ingegneria dell´Inf., Parma Univ., Italy
Abstract :
This work shows results of multi-bias-point DC hot electron stress of power AlGaAs/GaAs HFETs. Both the gate reverse current and the drain-gate electric field are varied independently in order to study the bias dependence of device degradation. Numerical drift-diffusion simulations are used to explain the degradation behavior.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device models; semiconductor device reliability; AlGaAs-GaAs; DC hot electron stress; bias dependence; bias point dependence; degradation behavior; device degradation; drain-gate electric field; drift-diffusion simulations; gate reverse current; hot electron degradation; microwave FETs; power HFETs; Breakdown voltage; Degradation; Electrons; FETs; Gallium arsenide; HEMTs; MODFETs; Numerical simulation; Stress; Testing;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803752
