High-speed multiplexers: a 50 Gb/s 4:1 MUX in InP HBT technology

Author

Mattia, J.P. ; Pullela, R. ; Georgieu, G. ; Baeyens, Y. ; Tsai, H.S. ; Chen, Y.K. ; Dorschky, C. ; Winkler Von Mohrenfels, T. ; Reinhold, M. ; Groepper, C. ; Sokolich, M. ; Nguyen, L. ; Stanchina, W.

Author_Institution

Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

189

Lastpage

192

Abstract

We have implemented a monolithic electronic 50 Gb/s 4:1 MUX core in an InP-based HBT technology. This rate is the fastest achieved in a monolithic 4:1 MUX to our knowledge, and is currently limited by the speed limitations of our pattern generation equipment. Our 2:1 MUX is too fast for characterization at present, but we present evidence that the speed of the 2:1 MUX is at least 60 Gb/s.

Keywords

III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated optoelectronics; multiplexing equipment; optical fibre communication; 50 Gbit/s; HBT technology; III-V semiconductors; InP; OEIC; high-speed multiplexers; optical fibre networks; pattern generation equipment; speed; speed limitations; Circuits; Clocks; Error correction; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Optical fiber networks; Packaging; Time division multiplexing; WDM networks;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803755

Filename

803755