DocumentCode :
3301684
Title :
High-speed multiplexers: a 50 Gb/s 4:1 MUX in InP HBT technology
Author :
Mattia, J.P. ; Pullela, R. ; Georgieu, G. ; Baeyens, Y. ; Tsai, H.S. ; Chen, Y.K. ; Dorschky, C. ; Winkler Von Mohrenfels, T. ; Reinhold, M. ; Groepper, C. ; Sokolich, M. ; Nguyen, L. ; Stanchina, W.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
fYear :
1999
fDate :
17-20 Oct. 1999
Firstpage :
189
Lastpage :
192
Abstract :
We have implemented a monolithic electronic 50 Gb/s 4:1 MUX core in an InP-based HBT technology. This rate is the fastest achieved in a monolithic 4:1 MUX to our knowledge, and is currently limited by the speed limitations of our pattern generation equipment. Our 2:1 MUX is too fast for characterization at present, but we present evidence that the speed of the 2:1 MUX is at least 60 Gb/s.
Keywords :
III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated optoelectronics; multiplexing equipment; optical fibre communication; 50 Gbit/s; HBT technology; III-V semiconductors; InP; OEIC; high-speed multiplexers; optical fibre networks; pattern generation equipment; speed; speed limitations; Circuits; Clocks; Error correction; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Optical fiber networks; Packaging; Time division multiplexing; WDM networks;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-5585-7
Type :
conf
DOI :
10.1109/GAAS.1999.803755
Filename :
803755
Link To Document :
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