Title :
A GaAs +3V low noise integrated downconverter for C-band applications [using MESFETs]
Author :
Trantanella, C. ; Blount, P. ; Shifrin, M.
Author_Institution :
Hittite Microwave Corp., Chelmsford, MA, USA
Abstract :
A low noise, plastic encapsulated downconverter operating in C-band is presented in this paper. This downconverter operates from a single +3 V supply, has a conversion gain of 26 dB, and a noise figure of less than 6 dB over the 5.5 to 7.5 GHz range. In addition, this downconverter has an output PldB of +5 dBm and an output IP3 of +14 dBm.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC frequency convertors; field effect MMIC; gallium arsenide; integrated circuit noise; integrated circuit packaging; 26 dB; 3 V; 5.5 to 7.5 GHz; C-band; C-band applications; GaAs; III-V semiconductors; conversion gain; low noise integrated downconverter; output IP3; output PldB; plastic encapsulation; Circuit topology; Costs; Frequency; Gallium arsenide; Noise figure; Packaging; Plastics; Power generation; Semiconductor device noise; Voltage;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803757
