Title :
Diffusive base transport in narrow base InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors
Author :
Ritter, D. ; Hamm, R.A. ; Feygenson, A. ; Panish, M.B. ; Chandrasekhar, S.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The sub-picosecond transit times measured in InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (HBTs) were widely interpreted in terms of quasi-ballistic base transport. The ballistic transport mechanism, however, is ruled out by the results presented here, which indicate that the common emitter current gain of narrow base InP/Ga/sub 0.47/In/sub 0.53/As HBTs is inversely proportional to the square of the base width, as expected for diffusive base transport.<>
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; heterojunction bipolar transistors; indium compounds; HBTs; InP-Ga/sub 0.47/In/sub 0.53/As; common emitter current gain; diffusive base transport; heterojunction bipolar transistors; narrow base; sub-picosecond transit times; Electron devices; Heterojunctions; Indium phosphide; Physics;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235263
