• DocumentCode
    3302006
  • Title

    High-temperature superconducting resonator-stabilized coplanar hybrid-integrated oscillator at 6.5 GHz

  • Author

    Klieber, R. ; Ramisch, R. ; Weigel, R. ; Schwab, M. ; Dill, R. ; Valenzuela, A.A. ; Russer, P.

  • Author_Institution
    Lehrstuhl fuer Hochfrequenztech., Tech. Univ. Munchen, Germany
  • fYear
    1991
  • fDate
    8-11 Dec. 1991
  • Firstpage
    923
  • Lastpage
    926
  • Abstract
    A small-size coplanar oscillator has been designed and entirely fabricated on a 10-mm*10-mm/sup 2/ LaAlO/sub 3/ substrate in superconducting microwave integrated circuit (SMIC) technology. As an active element, a GaAs MESFET has been used. The oscillator is stabilized by a coplanar waveguide transmission line resonator patterned from a YBa/sub 2/Cu/sub 3/O/sub 7-x/ film onto the LaAlO/sub 3/ substrate. The oscillator, operating at 77 K, is characterized by a center frequency of 6.5 GHz and a power output of nearly 5 dBm. A single-sideband phase noise to carrier ratio of -90 dBc/Hz at 10-kHz offset has been attained. The attenuation of harmonics is better than 10 dBc.<>
  • Keywords
    barium compounds; high-temperature superconductors; hybrid integrated circuits; microwave integrated circuits; microwave oscillators; resonators; superconducting integrated circuits; superconducting microwave devices; yttrium compounds; 6.5 GHz; 77 K; GaAs; GaAs MESFET; LaAlO/sub 3/ substrate; YBa/sub 2/Cu/sub 3/O/sub 7-x/; center frequency; coplanar hybrid-integrated oscillator; coplanar waveguide transmission line resonator; harmonics attenuation; high temperature superconducting resonator; power output; single-sideband phase noise to carrier ratio; superconducting microwave integrated circuit; High temperature superconductors; Integrated circuit technology; Microwave integrated circuits; Microwave oscillators; Microwave technology; Substrates; Superconducting films; Superconducting integrated circuits; Superconducting microwave devices; Superconducting transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0243-5
  • Type

    conf

  • DOI
    10.1109/IEDM.1991.235275
  • Filename
    235275