A 3.3 V, 21 Gb/s PRBS generator in AlGaAs/GaAs HBT technology

Author

Chen, M.G. ; Notthoff, J.K.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

281

Lastpage

284

Abstract

We present a pseudo-random bit sequence (PRBS) generator that outputs a 2/sup 7/-1 bit pattern at rates up to 21 Gb/s. The circuit is implemented in a 40 GHz GaAs HBT process, operates from a single 3.3 V power supply, and consumes only 1.1 W of power. The circuit advances the state of the art by demonstrating the feasibility of low-voltage/low-power design techniques in complex high-speed circuits, and results in the highest clock-speed-to-f/sub t/ ratio for a complex GaAs HBT logic circuit.

Keywords

III-V semiconductors; aluminium compounds; bipolar digital integrated circuits; bipolar logic circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; low-power electronics; pulse generators; 1.1 W; 21 Gbit/s; 3.3 V; 40 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT technology; GaAs HBT logic circuit; PRBS generator; high-speed circuit; low-power design techniques; low-voltage design techniques; pseudo-random bit sequence generator; Bit rate; Circuit testing; Clocks; Gallium arsenide; Heterojunction bipolar transistors; Logic circuits; Power dissipation; Power supplies; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803775

Filename

803775