• DocumentCode
    3302030
  • Title

    An intelligent MOS transistor featuring gate-level weighted sum and threshold operations

  • Author

    Shibata, T. ; Ohmi, T.

  • Author_Institution
    Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
  • fYear
    1991
  • fDate
    8-11 Dec. 1991
  • Firstpage
    919
  • Lastpage
    922
  • Abstract
    A novel functional MOS transistor which behaves much more intelligently than a mere switching device has been developed. The device has a floating gate whose potential is controlled by a plural number of input gates via capacitive coupling. The transistor is called a ´neuron MOSFET´ due to its similarity to biological neurons in that the transistor turns on when the weighted sum of all input signals exceeds a certain threshold value. Test devices were fabricated using a double-polysilicon NMOS process. The analysis of the basic device operation and its experimental verification are presented. A number of interesting applications of the neuron MOSFET are described which include a variable threshold transistor, a neuron circuit, a single-gate D/A (digital-to-analog) converter, and a soft hardware logic circuit.<>
  • Keywords
    MOS integrated circuits; digital-analogue conversion; insulated gate field effect transistors; integrated logic circuits; neural chips; capacitive coupling; double-polysilicon NMOS process; floating gate; functional MOS transistor; gate-level weighted sum; intelligent MOS transistor; neuron MOSFET; neuron circuit; single gate D/A converter; soft hardware logic circuit; threshold operations; variable threshold transistor; Circuit testing; Hardware; Integrated circuit technology; Logic circuits; Logic devices; MOS devices; MOSFET circuits; Neurons; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0243-5
  • Type

    conf

  • DOI
    10.1109/IEDM.1991.235276
  • Filename
    235276