DocumentCode :
3302030
Title :
An intelligent MOS transistor featuring gate-level weighted sum and threshold operations
Author :
Shibata, T. ; Ohmi, T.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
fYear :
1991
fDate :
8-11 Dec. 1991
Firstpage :
919
Lastpage :
922
Abstract :
A novel functional MOS transistor which behaves much more intelligently than a mere switching device has been developed. The device has a floating gate whose potential is controlled by a plural number of input gates via capacitive coupling. The transistor is called a ´neuron MOSFET´ due to its similarity to biological neurons in that the transistor turns on when the weighted sum of all input signals exceeds a certain threshold value. Test devices were fabricated using a double-polysilicon NMOS process. The analysis of the basic device operation and its experimental verification are presented. A number of interesting applications of the neuron MOSFET are described which include a variable threshold transistor, a neuron circuit, a single-gate D/A (digital-to-analog) converter, and a soft hardware logic circuit.<>
Keywords :
MOS integrated circuits; digital-analogue conversion; insulated gate field effect transistors; integrated logic circuits; neural chips; capacitive coupling; double-polysilicon NMOS process; floating gate; functional MOS transistor; gate-level weighted sum; intelligent MOS transistor; neuron MOSFET; neuron circuit; single gate D/A converter; soft hardware logic circuit; threshold operations; variable threshold transistor; Circuit testing; Hardware; Integrated circuit technology; Logic circuits; Logic devices; MOS devices; MOSFET circuits; Neurons; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0243-5
Type :
conf
DOI :
10.1109/IEDM.1991.235276
Filename :
235276
Link To Document :
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