Title :
57% efficiency, wide dynamic range linearized heterojunction FET-based power amplifier for wide-band CDMA handsets
Author :
Hau, G. ; Nishimura, T.B. ; Iwata, N.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
A high efficiency, wide dynamic range linearized power amplifier has been developed for 1.95 GHz wide-band CDMA (W-CDMA) handsets. The amplifier is based on a developed heterojunction FET, and its linearity and efficiency are further improved by incorporating a MMIC predistorter. The output power (P/sub out/) and power added efficiency (PAE) of the amplifier improve significantly from 25.5 dBm and 54.4% to 26.2 dBm and 57.4% respectively after the use of the predistorter, measured at an adjacent channel leakage power ratio (ACPR) of -40 dBc. With bias control, the linearized amplifier also shows an excellent low P/sub out/ (13 dBm) performance, achieving a PAE of 47.7% at the same ACPR criteria. This performance is believed to be the highest PAE reported for W-CDMA handset amplifiers.
Keywords :
JFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; code division multiple access; field effect MMIC; linearisation techniques; telephone sets; 1.95 GHz; 47.7 to 57.4 percent; ACPR criteria; MMIC predistorter; PAE; W-CDMA handsets; bias control; heterojunction FET; high efficiency; linearized HJFET-based power amplifier; power added efficiency; wide dynamic range; wideband CDMA handsets; Broadband amplifiers; Dynamic range; FETs; Heterojunctions; High power amplifiers; Linearity; MMICs; Multiaccess communication; Power amplifiers; Telephone sets;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803778
