DocumentCode
3302092
Title
An 800 MHz HBT class-E amplifier with 74% PAE at 3.0 volts for GMSK
Author
Wong, G.K. ; Long, S.I.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
299
Lastpage
302
Abstract
A low voltage, high efficiency HBT class-E amplifier has been demonstrated at 800 MHz. Collector efficiency of 78% and PAE of 74% with 13 dB transducer power gain were obtained with a 3.0 V supply. The output power was 21.3 dBm, limited by the device area available in this study. Spectral regrowth meets the normalized GSM mask standards. The efficiency was shown to increase by about 8% through the use of harmonic tuning on the input network.
Keywords
UHF power amplifiers; bipolar transistor circuits; circuit tuning; heterojunction bipolar transistors; minimum shift keying; transceivers; 13 dB; 3 V; 74 percent; 78 percent; 800 MHz; HBT class-E amplifier; PAE; harmonic tuning; high efficiency; input network; low voltage operation; normalized GSM mask standards; spectral regrowth; Capacitors; Circuits; Coaxial components; Frequency; Gain; Heterojunction bipolar transistors; Impedance; Low voltage; Resonance; Signal design;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803779
Filename
803779
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