Title :
MEMS hotplates with TiN as a heater material
Author :
Creemer, J.F. ; van der Vlist, W. ; de Boer, C.R. ; Zandbergen, H.W. ; Sarro, P.M. ; Briand, D. ; de Rooij, N.F.
Author_Institution :
Kavli Inst. of NanoScience-HREM, Delft
fDate :
Oct. 30 2005-Nov. 3 2005
Abstract :
Titanium nitride has been investigated as a heater material for hotplates and microreactors. TiN is CMOS compatible, and has a higher melting point (2950 degC) than conventional heaters of Pt and poly-Si. For the first time, TiN is tested inside a conventional membrane of LPCVD SiNx. Two types of TiN are considered: high stress and low stress. Their performance is compared with that of Pt. The maximum temperature of TiN coils is 11% higher than Pt coils with the same layout and over 700 degC. For high-stress TiN, the TCR is almost constant and close to that of Pt, making it very suitable for temperature sensing. In the case of low-stress TiN the TCR becomes nonlinear and changes sign. The large differences between the nitrides are explained by the grain structure. Low-stress TiN contains many voids. They relax stress but strongly scatter the conduction electrons. The different grain structures are related to the sputtering parameters according to the Thornton model
Keywords :
electric heating; micromechanical devices; temperature sensors; titanium compounds; MEMS hotplates; Thornton model; TiN; grain structure; heater material; hotplates material; microreactors; sputtering parameters; temperature sensor; Biomembranes; Coils; Micromechanical devices; Scattering; Silicon compounds; Stress; Temperature sensors; Testing; Tin; Titanium;
Conference_Titel :
Sensors, 2005 IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-9056-3
DOI :
10.1109/ICSENS.2005.1597703