Title :
A reverse base current under high level injection and its influence on BiCMOS circuit
Author :
Ishimaru, K. ; Matsuoka, F. ; Maeda, T. ; Satake, H. ; Fuse, T. ; Matsui, M. ; Urakawa, Y. ; Momose, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The base pushout induced reverse base current (I/sub RB/) at high level injection was observed and analyzed. A simple model to describe this phenomenon was also proposed. The I/sub RB/ is described universally by this model even if collector conditions are varied. The I/sub RB/ increases with decreasing device temperature and is suppressed by voltage drop at the external base region due to carrier freeze-out. This reverse base current causes failure on the BiCMOS circuit and gives a new limitation for applied power supply voltage.<>
Keywords :
BiCMOS integrated circuits; bipolar transistors; integrated circuit technology; semiconductor device models; BiCMOS circuit; I-V characteristics; applied power supply voltage; base pushout induced reverse base current; carrier freeze-out; collector conditions; device temperature; failure; high level injection; model; polysilicon emitter bipolar transistors; reverse base current; voltage drop; BiCMOS integrated circuits; Bipolar transistors; Fuses; Impact ionization; Laboratories; Neodymium; Power supplies; Semiconductor devices; Ultra large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235288
