Title :
Si/sub 1-x/Gex channel vertical PMOSFET with asymmetric Ge profile
Author :
Chen, Xiangdong ; Ouyang, Qiqing ; Jayanarayanan, Sankaran Kartik ; Prins, Freek E. ; Banerjee, Sanjay
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Describes a vertical PMOSFET with an asymmetric Si/Si/sub 1-x/Ge/sub x/ channel . On the source side, the channel is made of Si, so the short channel performance is not degraded compared with a Si device. The rest of the channel is made of strained Si/sub 1-x/Ge/sub x/. and we still can take advantage of the high hole mobility in the strained Si/sub 1-x/Ge/sub x/ layer. The energy step in the channel increases the lateral electric field near the source and helps with carrier injection from the source to the channel. Ultra-high vacuum chemical vapor deposition (UHV-CVD) was used to grow the device layers with in situ doping.
Keywords :
Ge-Si alloys; MOSFET; chemical vapour deposition; doping profiles; elemental semiconductors; hole mobility; semiconductor growth; semiconductor materials; silicon; Si-Si/sub 1-x/Ge/sub x/; Si/Si/sub 1-x/Ge/sub x/; asymmetric Ge profile; carrier injection; energy step; hole mobility; in situ doping; lateral electric field; short channel performance; strained layer; ultra-high vacuum chemical vapor deposition; vertical PMOSFET; Germanium silicon alloys; MOSFET circuits; Silicon germanium;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937860
