ZnSe-based laser diodes for the 560 nm spectral region

Reports the fabrication, the optimization and the operational characteristics of ZnSe-based laser diodes with quarternary ZnCdSSe quantum wells (QWs), specially designed to operate around 560 nm. The conventional double heterostructure, separate confinement design of the laser structures is realized with ZnMgSSe cladding and ZnSSe wave guiding layers. To obtain lasing emission at the desired spectral region high Cd contents are required for the QWs. The photoluminescence spectrum of such a laser diode. I indicates that these QWs can be grown at high optical quality despite the large lattice mismatch between the QW and the rest of the structure. The full width at half maximum of the QW emission is only 13 meV, which is close to the theoretical value for a mixed crystal with 45% Cd. High resolution X-ray diffraction measurements confirm the high crystal quality of the structure.