Title :
A flip-flop based on monolithic integration of InAs/AlSb/GaSb RITDs and InAlAs/InGaAs/InP HEMTs
Author :
Fay, P. ; Xu, Y. ; Lu, J. ; Bernstein, Gary H. ; Gonzalez, A. ; Mazumder, P. ; Chow, D.H. ; Schulman, J.N.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Abstract :
We report for the first time the demonstration of logic circuits based on the monolithic integration of high-speed submicron gate length InAlAs/InGaAs/InP HEMTs with InAs/AlSb/GaSb RITDs. An inverting D flip-flop was implemented using the MOBILE circuit architecture.
Keywords :
III-V semiconductors; aluminium compounds; flip-flops; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; resonant tunnelling diodes; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMT; InAs-AlSb-GaSb; InAs/AlSb/GaSb RITD; MOBILE circuit architecture; high-speed operation; inverting D flip-flop; logic circuit; monolithic integration; Flip-flops; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic circuits; MODFETs; Monolithic integrated circuits; Power dissipation; Voltage;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937866
