DocumentCode
3302418
Title
Crystallization technology for low voltage operated TFT
Author
Yoshida, T. ; Kinugawa, M. ; Kanbayashi, S. ; Onga, S. ; Ishihara, M. ; Mikata, Y.
fYear
1991
fDate
8-11 Dec. 1991
Firstpage
843
Lastpage
846
Abstract
The authors propose a novel crystallization technology for achieving high on/off current ratio of the bottom gate TFT (thin-film transistor), especially at low operation voltage. A 6 decades on/off current ratio with 3-V gate swing was obtained utilizing this process. A 256k SRAM was fabricated using this technology. It is demonstrated that this technology improves SRAM cell margin drastically, especially at the low operation voltage.<>
Keywords
SRAM chips; crystallisation; semiconductor technology; thin film transistors; 256 kbit; SRAM; bottom gate TFT; cell margin; crystallization technology; high on/off current ratio; low operation voltage; low voltage operated TFT; Amorphous silicon; Annealing; Crystallization; Degradation; Furnaces; Low voltage; Random access memory; Semiconductor films; Semiconductor thin films; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0243-5
Type
conf
DOI
10.1109/IEDM.1991.235293
Filename
235293
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