Title :
Crystallization technology for low voltage operated TFT
Author :
Yoshida, T. ; Kinugawa, M. ; Kanbayashi, S. ; Onga, S. ; Ishihara, M. ; Mikata, Y.
Abstract :
The authors propose a novel crystallization technology for achieving high on/off current ratio of the bottom gate TFT (thin-film transistor), especially at low operation voltage. A 6 decades on/off current ratio with 3-V gate swing was obtained utilizing this process. A 256k SRAM was fabricated using this technology. It is demonstrated that this technology improves SRAM cell margin drastically, especially at the low operation voltage.<>
Keywords :
SRAM chips; crystallisation; semiconductor technology; thin film transistors; 256 kbit; SRAM; bottom gate TFT; cell margin; crystallization technology; high on/off current ratio; low operation voltage; low voltage operated TFT; Amorphous silicon; Annealing; Crystallization; Degradation; Furnaces; Low voltage; Random access memory; Semiconductor films; Semiconductor thin films; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235293
