Title :
A new three-dimensional MOSFET gate-induced drain leakage effect in narrow deep submicron devices
Author :
Geissler, S. ; Porth, B. ; Lasky, J. ; Johnson, J. ; Voldman, S.
Author_Institution :
IBM, Essex Junction, VT, USA
Abstract :
A new MOSFET gate-induced drain leakage (GIDL) mechanism is observed in narrow-width trench-isolated MOSFET devices. Electrical measurements and device simulation show that this mechanism occurs due to electric-field enhancement at the three-dimensional intersection of the gate-to-drain overlap region and the trench corner. The enhanced electric field increases the GIDL current at the 3-D intersection region. This imposes another fundamental limit on MOSFET dielectric scaling in deep submicron narrow-width devices. Since the 3-D GIDL mechanism is caused by a high electric field, trench corner rounding and lightly doped drain junctions provide effective solutions.<>
Keywords :
high field effects; insulated gate field effect transistors; leakage currents; semiconductor device models; semiconductor device testing; GIDL current; MOSFET gate-induced drain leakage; deep submicron devices; device simulation; dielectric scaling; electric-field enhancement; gate-to-drain overlap region; high electric field; lightly doped drain junctions; narrow-width trench-isolated MOSFET devices; numerical model; three-dimensional intersection; trench corner rounding; Current measurement; Dielectric devices; Dielectric measurements; Electric variables measurement; MOSFET circuits; Numerical analysis; Power MOSFET; Power supplies; Random access memory; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235294
