Title :
Characterization of a 0.1 /spl mu/m MOSFET using cross-sectional scanning tunneling microscopy
Author :
Okui, T. ; Hasegawa, S. ; Nakashima, H. ; Fukutome, H. ; Arimoto, H.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
A MOSFET structure was visualized in a nanometer scale using STM. Topographic STM images show the source/drain (S/D) regions, the poly-Si gate, and the very thin gate oxide layer on a nanometer scale. The results show that STM is a powerful technique to determine the depth of the S/D, the channel length, and the local carrier concentration.
Keywords :
MOSFET; carrier density; scanning tunnelling microscopy; 0.1 micron; MOSFET; Si; channel length; cross-sectional STM; local carrier concentration; nanometer scale; thin gate oxide layer; topographic images; Electron beams; Ion implantation; Laboratories; MOSFET circuits; Microscopy; Nanostructures; Spectroscopy; Surface topography; Tunneling; Visualization;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937871
