• DocumentCode
    3302463
  • Title

    Characterization of a 0.1 /spl mu/m MOSFET using cross-sectional scanning tunneling microscopy

  • Author

    Okui, T. ; Hasegawa, S. ; Nakashima, H. ; Fukutome, H. ; Arimoto, H.

  • Author_Institution
    Inst. of Sci. & Ind. Res., Osaka Univ., Japan
  • fYear
    2001
  • fDate
    25-27 June 2001
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    A MOSFET structure was visualized in a nanometer scale using STM. Topographic STM images show the source/drain (S/D) regions, the poly-Si gate, and the very thin gate oxide layer on a nanometer scale. The results show that STM is a powerful technique to determine the depth of the S/D, the channel length, and the local carrier concentration.
  • Keywords
    MOSFET; carrier density; scanning tunnelling microscopy; 0.1 micron; MOSFET; Si; channel length; cross-sectional STM; local carrier concentration; nanometer scale; thin gate oxide layer; topographic images; Electron beams; Ion implantation; Laboratories; MOSFET circuits; Microscopy; Nanostructures; Spectroscopy; Surface topography; Tunneling; Visualization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2001
  • Conference_Location
    Notre Dame, IN, USA
  • Print_ISBN
    0-7803-7014-7
  • Type

    conf

  • DOI
    10.1109/DRC.2001.937871
  • Filename
    937871
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3302463