MOCVD for PZT thin films by using novel metalorganic sources

Author

Itoh, H. ; Kashihara, K. ; Okudaira, T. ; Tsukamoto, K. ; Akasaka, Y.

Author_Institution

Mitsubishi Electric Corp., Hyogo, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

831

Lastpage

834

Abstract

The authors describe an MOCVD (metal-organic chemical vapor deposition) method for forming PZT thin films using novel metal-organic source materials. Bisdipivaloylmethanato lead, zirconium-t-butoxide, and titanium tetra-i-propoxide were used as source materials. PZT thin films were formed by the thermal oxidation of the vapor of these source materials with oxygen, at a temperature ranging from 600 to 700 degrees C under a reduced pressure ranging from 1 to 2 Torr. Perovskite structures with well-developed crystalline grains were obtained on Pt

Keywords

chemical vapour deposition; dielectric losses; ferroelectric thin films; lead compounds; permittivity; 1 to 2 torr; 600 to 700 degC; MOCVD; N/sub 2/ carrier gas; PZT thin films; PbZrO3TiO3; Pt; bisdipivaloylmethanato lead; dielectric constant; electrical characteristics; ferroelectricity; flow rate; loss tangent; metalorganic sources; perovskite structure; reduced pressure; thermal oxidation; titanium tetra-i-propoxide; zirconium-t-butoxide; Chemical vapor deposition; Crystalline materials; Crystallization; Inorganic materials; Lead compounds; MOCVD; Oxidation; Sputtering; Titanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235296

Filename

235296