Hyperspectral imaging of breakdown in InAlAs/InGaAs HEMTs: a comparative study

Author

Somerville, M. ; Rameau, J. ; Nii Moi Addo

Author_Institution

Dept. of Phys. & Astron., Vassar Coll., Poughkeepsie, NY, USA

fYear

2001

fDate

25-27 June 2001

Firstpage

65

Lastpage

66

Abstract

Although InAlAs/InGaAs HEMTs offer promise for high-speed, high power applications, both offstate and on-state breakdown voltages in this material system tend to be poor. One promising avenue for understanding breakdown is the study of photon emission. Previous examinations of emission in this material system and in the AlGaAs material system have generally been limited to investigations of a single device. In this work we will present a comparative investigation of emission at breakdown in a set of InAlAs/InGaAs HEMTs that includes devices with a wide range of doping levels. Such a comparison allows us to understand better the tradeoffs in device design, as well as helping us to identify when/if different breakdown mechanisms may be at play.

Keywords

III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device breakdown; semiconductor device reliability; InAlAs-InGaAs; InAlAs/InGaAs HEMT; breakdown voltage; hyperspectral imaging; photon emission; Data mining; Doping; Electric breakdown; Fingers; HEMTs; Hyperspectral imaging; Indium compounds; Indium gallium arsenide; MODFETs; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937874

Filename

937874