Title :
Extension of safe-operating-area by optimizing body-current in submicron LDMOS transistors
Author :
Lee, S.K. ; Choi, Y.C. ; Kim, J.H. ; Kim, C.J. ; Kang, H.S. ; Song, C.S.
Author_Institution :
New Technol. Dev. Team, Fairchild Korea Semicond. Co, Kyonggi, South Korea
Abstract :
We present the extension of Hot-Electron-Limited SOA and Electrical SOA by optimising the two peaks of body current in 20 V LDMOS Transistors. The LDMOS has two peaks of body current and the origin of two peaks can be explained through hot carrier injection phenomenon. The first peak shows the appearance of weakly impact ionization related to the device degradation and the second peak shows the occurrence of snap-back phenomenon predicting device destruction, respectively.
Keywords :
MOSFET; hot carriers; impact ionisation; semiconductor device reliability; 20 V; body current; electrical SOA; hot carrier injection; hot-electron-limited SOA; impact ionization; safe operating area; snap-back phenomenon; submicron LDMOS transistor; Analytical models; Degradation; Design optimization; Doping; Hot carrier injection; Impact ionization; Kirk field collapse effect; Process design; Semiconductor optical amplifiers; Voltage;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937875
